JPH053150B2 - - Google Patents

Info

Publication number
JPH053150B2
JPH053150B2 JP58116540A JP11654083A JPH053150B2 JP H053150 B2 JPH053150 B2 JP H053150B2 JP 58116540 A JP58116540 A JP 58116540A JP 11654083 A JP11654083 A JP 11654083A JP H053150 B2 JPH053150 B2 JP H053150B2
Authority
JP
Japan
Prior art keywords
electrode film
film
semiconductor film
electrode
photoelectric conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58116540A
Other languages
English (en)
Japanese (ja)
Other versions
JPS607730A (ja
Inventor
Hiroshi Kawada
Seiichi Kyama
Hitoshi Kihara
Shoichi Nakano
Soichi Sakai
Yukinori Kuwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP58116540A priority Critical patent/JPS607730A/ja
Publication of JPS607730A publication Critical patent/JPS607730A/ja
Publication of JPH053150B2 publication Critical patent/JPH053150B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP58116540A 1983-06-27 1983-06-27 集積型光起電力装置の製造方法 Granted JPS607730A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58116540A JPS607730A (ja) 1983-06-27 1983-06-27 集積型光起電力装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58116540A JPS607730A (ja) 1983-06-27 1983-06-27 集積型光起電力装置の製造方法

Publications (2)

Publication Number Publication Date
JPS607730A JPS607730A (ja) 1985-01-16
JPH053150B2 true JPH053150B2 (en]) 1993-01-14

Family

ID=14689643

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58116540A Granted JPS607730A (ja) 1983-06-27 1983-06-27 集積型光起電力装置の製造方法

Country Status (1)

Country Link
JP (1) JPS607730A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066872A (ja) * 1983-09-22 1985-04-17 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
US20050145609A1 (en) * 2001-02-26 2005-07-07 John Gregory Method of forming an opening or cavity in a substrate for receiving an electronic component

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5838935B2 (ja) * 1975-02-07 1983-08-26 日本電気株式会社 ハンドウタイハクヘンノセイゾウホウホウ

Also Published As

Publication number Publication date
JPS607730A (ja) 1985-01-16

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